CS65N25ANR mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤50mΩ)
* Low Gate Charge (Typical Data:90.1nC)
* Low Reverse transfer capacitances(Typical:44 pF)
* 100% S.
Power switch circuit of electron ballast and adaptor.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
R.
VDSS
250
CS65N25 ANR, the silicon N-channel Enhanced ID
65
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
420
which reduce the conduction loss, improve switching
RDS(ON)Typ
42
performance and enhance the avalanch.
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